|
|
|
|
|
|
 Home > 제품소개 > Compound Semiconductors |
|
 |
| Property |
Specification |
| Surface Orientation |
C-plane(0001) |
| M-axis Tilt Angle |
0 ± 0.1deg, 0.2 or 0.3 ± 0.05deg |
| Diameter |
50.8 ± 0.1㎜ |
| Thickness |
0430 ± 0.020㎜ |
| BOW |
≤10㎛ |
| TTV |
≤5㎛ |
| Roughness(Ra) |
≤0.3㎚ |
| Orientation Flat |
A-plane(11-20) ± 0.3deg |
| Flat Length |
16 ± 0.8㎜ |
| Front Surface Finish |
epi-ready |
| Back Surface Finish |
as-lapped(SSP) or epi-readyy(DSP) |
|
 |
| Property |
Specification |
| Surface Orientation |
R-plane(1-102) |
| Diameter |
50.8 ± 0.1㎜ |
| Thickness |
0.430 to 0.020㎜ |
| BOW |
≤10㎛ |
| TTV |
≤5㎛ |
| Roughness(Ra) |
≤0.3㎚ |
| Orientation Flat |
45deg from C-axis projection onto R-plane |
| Flat Length |
16.0 ± 0.8㎜ |
| Front Surface Finish |
epi-ready |
| Back Surface Finish |
as-lapped(SSP) or epi-readyy(DSP) |
|
 |
| Property |
Specification |
| Surface Orientation |
A-plane(11-20) |
| M-axis Tilt Angle |
0.0 ± 0.1deg |
| C-axis Tilt Angle |
0.0 ± 0.1deg |
| Diameter |
50.8 ± 0.1㎜ |
| Thickness |
0.430 ± 0.020㎜ |
| BOW |
≤10㎛ |
| TTV |
≤5㎛ |
| Roughness(Ra) |
≤0.3㎚ |
| Orientation Flat |
C-plane(0001) ± 0.3deg |
| Flat Length |
16.0 ± 0.8㎜ |
| Front Surface Finish |
epi-ready |
| Back Surface Finish |
as-lapped(SSP) or epi-readyy(DSP) |
|
 |
| Property |
Specification |
| Surface Orientation |
M-plane(10-10) |
| Diameter |
50.8 ± 0.1㎜ |
| Thickness |
0.430 to 0.020㎜ |
| BOW |
≤10㎛ |
| TTV |
≤5㎛ |
| Roughness(Ra) |
≤0.3㎚ |
| Orientation Flat |
C-plane(0001) ± 0.3deg |
| Flat Length |
16.0 ± 0.8㎜ |
| Front Surface Finish |
epi-ready |
| Back Surface Finish |
as-lapped(SSP) or epi-readyy(DSP) |
|
|
|
|
|
|
|
